Three two-hour sessions. There are a number of semiconductor technologies being used for power amplifier design. This course introduces students to the GaN transistor, its properties, various structures, discrete and MMIC devices. The properties of GaN will be presented showing the advantage of these devices over other materials for power amplifier applications. Material will be presented on GaN HEMT transistors, geometries, semiconductor processes and structures with associated breakdown voltages, power capability, gain, efficiency, and frequency performance. Guidelines for reliable operation will be presented considering device junction temperature including thermal management techniques. MMIC matching and biasing elements will be shown. The nonlinear models of GaN HEMT devices necessary for the Computer Aided Design ( CAD) of power amplifiers will be presented. Design considerations for both constant amplitude envelope signals as well as the non-constant amplitude envelope signals will be presented. Design procedures will be shown for various GaN PA examples including different classes of operation as well as the popular Doherty PA. This course is available as part of theRF Mentor Academy subscription.
Learning objectives
Upon completing the course you will be able to:
Understand GaN semiconductor technology, its properties, and its advantage over other materials Learn how the GaN FET geometry and semiconductor processing affect the PA breakdown voltages, gain, power capability, efficiency, and frequency performance. Choose the correct nonlinear model to design the PA Understand design considerations for constant amplitude envelope signals as well as non-constant envelop amplitude signals Learn design procedures for GaN PA various classes of operation and the Doherty PA using modern simulators.
Target Audience
Semiconductor, component, and system designers including engineering managers will benefit from this course. RF/wireless engineers who want to understand the performance enhancements of GaN PAs. Application and product engineers supporting customers in areas relating to GaN PAs. PA circuit designers who wish to learn design techniques for nonlinear GaN PAs. Basic knowledge of microwave measurements and transmission line (Smith Chart) theory is assumed.
Outline
The following topics are spread over three 2-hour sessions GaN Semiconductor and GaN HEMT PA Capabilities • GaN semiconductor properties • GaN HEMT transistors • geometries • semiconductor processes • breakdown voltages • thermal resistance • power capability • reliability • thermal management techniques • gain • efficiency • frequency performance GaN FET PA Devices and Models • GaN HEMT vendors and devices • comparison of MMIC devices and performance • MMIC matching and biasing elements • nonlinear GaN HEMT models GaN FET PA Design Considerations • Constant amplitude envelope design considerations • non-constant amplitude envelop ( CDMA, WCDMS, LTE) design considerations and solutions GaN FET PA Design Examples • PA design for various classes of operation as well as the popular Doherty amplifier using the latest nonlinear CAD circuit programs
